Toshiba rn1321a rn1327a 100406 free download

File name rn1321a_rn1327a_100406.pdf

RN1321ARN1327A TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1321A,RN1322A,RN1323A,RN1324A RN1325A,RN1326A,RN1327A Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm High current driving is possible. Since bias resisters are built in the transistor,the miniaturization of the apparatus by curtailment of the number of parts and laborsaving of an assembly are possible. Many kinds of resistance value are lined up in order to support various kinds of circuit design. Complementary to RN2321A to RN2327A Low VCE(sat) enable to be low power dissipation on high current driving. Equivalent Circuit And Bias Resistance Values Type No. R1 (k) R2 (k) 1. BASE RN1321A 1 1 2. EMITTER RN1322A 2.2 2.2 3. COLLECTOR RN1323A 4.7 4.7 JEDEC RN1324A 10 10 JEITA SC-70 RN1325A 0.47 10 TOSHIBA 2-2E1A RN1326A 1 10 Weight: 6 mg (typ.) RN1327A 2.2 10 Absolute Maximum Ratings (Ta = 25